Abstract
We present a novel technique, based on a proprietary approach to analyzing the raw optical data, which is able to decouple the effects of Ge and B on the optical properties of a B-doped SiGe film. An example is given of the application of this technique to measure the two material fractions, plus the thickness, simultaneously and independently on a standard Opti-Probe ® film-thickness tool. Three sets of doped epitaxial SiGe layers were grown, each with a nominally fixed Ge-content but with the Boron levels varying from zero to ∼1×10 20 cm −3. Two sets consisted of single-layer films on c-Si substrates, the other consisted of similar films capped with undoped epi-Si layers. The Ge-fractions found were in good agreement with XRD and SIMS whilst the calculated “doping parameter” was found to follow a monotonic relationship with changes in Boron concentration in each case.
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