Abstract
A method is presented which allows a fast, nondestructive, and laterally resolved separation of bulk and surface recombination of silicon samples. The method works without any assumptions on the values of diffusion length and surface recombination velocity. No special sample processing is necessary prior to the measurement. An extended Monte Carlo based sensitivity analysis shows that diffusion lengths below the sample thickness can be determined with an accuracy better than ±20%. The detection range for the surface recombination velocity is 102–105 cm/s with a maximum uncertainty of a factor of 2. Experimental data are presented that prove the applicability of the new scheme.
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