Abstract
The physics of quantum many-body systems have been studied using bulk correlated materials, and recently, moiré superlattices formed by atomic bilayers have appeared as a novel platform in which the carrier concentration and the band structures are highly tunable. In this brief review, we introduce an intermediate platform between those systems, namely, a band-filling- and bandwidth-tunable electric double-layer transistor based on a real organic Mott insulator κ-(BEDT-TTF)2Cu[N(CN)2]Cl. In the proximity of the bandwidth-control Mott transition at half filling, both electron and hole doping induced superconductivity (with almost identical transition temperatures) in the same sample. The normal state under electric double-layer doping exhibited non-Fermi liquid behaviors as in many correlated materials. The doping levels for the superconductivity and the non-Fermi liquid behaviors were highly doping-asymmetric. Model calculations based on the anisotropic triangular lattice explained many phenomena and the doping asymmetry, implying the importance of the noninteracting band structure (particularly the flat part of the band).
Highlights
The physics of quantum many-body systems have been studied using bulk correlated materials, and recently, moiré superlattices formed by atomic bilayers have appeared as a novel platform in which the carrier concentration and the band structures are highly tunable
The Hubbard model is thought to include the essential physics of these phenomena, a detailed comparison of the model and real materials is lacking because the pristine Mott state is commonly obscured by a complicated band structure
We fabricated an electric double layer (EDL) transistor [7], which is a type of field-effect transistor, using an organic Mott insulator
Summary
The physics of quantum many-body systems have been studied using bulk correlated materials, and recently, moiré superlattices formed by atomic bilayers have appeared as a novel platform in which the carrier concentration and the band structures are highly tunable In this brief review, we introduce an intermediate platform between those systems, namely, a band-filling- and bandwidth-tunable electric double-layer transistor based on a real organic Mott insulator κ-(BEDTTTF) Cu[N(CN)2 ]Cl. In the proximity of the bandwidth-control Mott transition at half filling, both electron and hole doping induced superconductivity (with almost identical transition temperatures) in the same sample. The electronic energy scale of these systems is quite different from that of bulk correlated materials, and an intermediate platform between the artificial and highly tunable moiré superlattices and the bulk correlated materials, such as high-TC cuprates, is invaluable In this brief review, we introduce bandfilling- and bandwidth-control measurements in a transistor device based on an organic antiferromagnetic Mott insulator (Figure 1) [4,5,6]. The (gate voltage)-(strain) phase diagram corresponded to the conceptual phase
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