Abstract
an industrial process for aluminum-silicon metallization using two rate-controlled electron beam evaporators which operate simultaneously is described. The silicon source is controlled through direct measurement of the deposition rate with a quartz crystal monitor. For aluminum the ion current produced by the primary electron beam serves to measure the deposition rate. The ion back-stream measurement method for control of the evaporator is discussed and a typical run is described. The reproducibility of the silicon content produced with this method is investigated. The coating geometry was designed to optimize the uniformity and the step coverage of the deposited films; for this purpose eccentrically located evaporation sources were used. The results achieved for uniformity and coverage of various oxide steps with cold and heated substrates are demonstrated. An investigation of MOS devices with respect to radiation damage due to the electron beam evaporators shows how these sources can be used to coat highly sensitive gate oxides.
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