Abstract
In this paper we outline the procedures needed to realistically model the electronic characteristics of a variety of amorphous silicon thin-film transistors. We start from fundamental two-dimensional device simulations based on the properties of amorphous silicon. These enable us to correctly interpret the appropriate device physics and can therefore validate simpler semi-analytic models. Our focus will be conventional thin-film transistors, as well as novel high voltage and vertical structures. Our models are in good agreement with experimental data and can be used in circuit simulation programs, such as SPICE
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