Simulation of intervalley mixing in double-barrier diodes using the lattice Wigner function

Abstract

We demonstrate that through the use of the lattice Wigner function, band structure effects can be included explicitly in quantum kinetic simulations of double-barrier diodes. These band structure effects include Γ to X intervalley mixing and effective mass variations at the interface. In a simplified case which emphasizes the impact of broken translational symmetry, we have used this technique to calculate, for the first time, both Γ and X valley equilibrium Wigner functions for an AlAs/GaAs double-barrier diode.