Abstract
A model describing the growth kinetics of the characteristic size of octahedral and platelike oxygen precipitates in silicon is suggested. It is shown that the experimental data of various authors on the growth kinetics of precipitates are adequately described by the assumption that their growth is limited by diffusion, while the geometry of precipitates is characterized by constant eccentricity.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
