Abstract
By modifying Germanium (Ge) material, direct bandgap emission can be achieved, improving light emission efficiency. This paper proposes a strain-engineered GeSn laser based on SiN stress. The stress distribution within the device and its optoelectronic characteristics were analyzed through simulation. The laser is predicted to emit light at a wavelength of approximately 2252 nm, with a threshold current density around 220 kA/cm2. By introducing a multi-quantum well (MQW) structure, the threshold current density is reduced to about 90 kA/cm2. The work in this paper provides a feasible technical solution for the design of efficient silicon-based light sources.
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