Simulation and Design of Step-Etched Junction Termination Extensions for GaN Power Diodes

Abstract

Proper edge termination is required to reach large blocking voltages in vertical power devices. Limitations in selective area p-type doping in GaN restrict the types of structures that can be used for this purpose. A junction termination extension (JTE) can be employed to reduce field crowding at the junction periphery where the charge in the JTE is designed to sink the critical electric field lines at breakdown. One practical way to fabricate this structure in GaN is by a step-etched single-zone or multi-zone JTE where the etch depths and doping levels are used to control the charge in the JTE. The multi-zone JTE is beneficial for increasing the process window and allowing for more variability in parameter changes while still maintaining a designed percentage of the ideal breakdown voltage. Impact ionization parameters reported in literature for GaN are compared in a simulation study to ascertain the dependence on breakdown performance. Two 3-zone JTE designs utilizing different impact ionization coefficients are compared. Simulations confirm that the choice of impact ionization parameters affects both the predicted breakdown of the device as well as the fabrication process variation tolerance for a multi-zone JTE. Regardless of the impact ionization coefficients utilized, a step-etched JTE has the potential to provide an efficient, controllable edge termination design.