Abstract
Abrupt or graded changes in the position of a band edge relative to the vacuum level occur where there is an abrupt or gradual change in the composition of the material in an amorphous semiconductor device. These shifts in the band edge are very useful in α-Si:H solar cells and other devices, but many questions remain regarding their physical nature and how carriers traverse them. This paper presents simulations of time-of-flight experiments across both gradual and abrupt shifts in the edge of the band in which carriers are traveling. These experiments should be able to help determine the effects of these shifts on carrier transport. The effects of a band tail on simulated transients are also shown.
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