Abstract
A simple analytical solution, which retains a general dependence of transport parameters on impurity concentration, is presented for minority carrier transport in nonuniformly doped semiconductor quasineutral regions. The new solution exhibits improved accuracy for high surface recombination velocities over all previous solutions of the same degree of analytic complexity which retain a general dependence of the transport parameters on impurity concentration, while retaining the same degree of accuracy for low surface recombination velocities as the most accurate of these previous solutions. The proposed solution exhibits accuracy comparable to significantly more complex third order expressions which are derived by three iterations using a systematic approach.
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