Abstract
The effects of the operating temperature T and the drain voltage on the drain temperature in GaAs metal semiconductor field effect transistor (MESFET) are a serious problem, which do not receive enough attention in the scientific literature in the last years. This article presents a simple technique to determine the drain temperature by setting the equality between the field-dependent diffusivity-to-mobility ratio (nonlinear relation) and the constant ratio linear modeling. So, we investigate the impact of the high-field electron diffusivity model in GaAs on the characteristics of MESFETs. Two dimensional numerical simulation is used to describe significant physics in the characteristics for 0.5 μm MESFET GaAs.
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