Abstract
The simple and cost-effective method to form vanadium oxides (VOx) with high density of gap-states and role of gap-states for organic electronics were investigated. The percentage of V2O5 decreased from 82.7% to 29.3% as the deposition rate increased from 0.1 to 1.0Å/s in thermal evaporation. Synchrotron radiation photo emission spectroscopy revealed that a number of gap states relating to oxygen vacancies was induced near the Fermi level, transporting charges and lowering the hole injection barrier from 0.92 to 0.67eV. As a result, the operation voltage at 1mA/cm2 was reduced from 8.3 to 5.2V
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
