Abstract
The formation of hybrid structures for creating sensitive sensors is a difficult task. In this study, we developed a facile technique of semiconductor technology to fabricate hybrid structures based on SiO2/embeddedAg/Si and embeddedAg/Si for a surface-enhanced Raman scattering. Herein, our hybrid structures were created in one technological cycle, which consists of the reduction of silver nitrate salt from a solution on the silicon surface and subsequent high-temperature annealing at 1000 °C. In addition, it allows not only to preserve the plasmonic properties of Ag particles on the Si surface but also to protect them from further external influences by coating them with a SiO2 layer. Also, the basis for creating such hybrid structures is the performed numerical calculations of the position of a localized surface plasmon resonance as a function of the geometry of structures. Furthermore, the theoretical full-wave electromagnetic modeling of Raman scattering in an embedded Ag/Si structure showed the presence of enhancement regions “hot spots” at sharp corners with a maximum enhancement factor of 106. Finally, surface-enhanced Raman scattering spectroscopy of such structures showed reliable detection of the methyl orange from an aqueous solution at a concentration of 10-5M.
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