Abstract
This paper presents the results of studies of the electrophysical, photoelectric, and magnetic properties of silicon samples doped by diffusion of germanium impurity atoms. It has been shown that impurity germanium atoms form in silicon binary compounds of the GexSi1-x type, the concentration of which varies with the depth of the original silicon. The developed diffusion technology of silicon doping with impurity germanium atoms made it possible to obtain a material with different concentrations of impurity germanium atoms, resistivity, and the type of conductivity. The optimal electrophysical parameters of the obtained samples for studying the electrophysical parameters and the magnetic properties were determined, which made it possible to show the possibilities of creating new types of sensors and devices for semiconductor electronics. The presented studies make it possible to develop respective directions in the field of materials science with magnetic properties and the creation of efficient photovoltaic cells for photoenergetics.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
