Silicon Surface Passivation for Heteroepitaxy by Hydrogen Termination

Abstract

ABSTRACTResults are reported for XPS and LEED evaluations of Si(100) wafers cleaned, etched, andhydrogen terminated by various low — temperature, wet — chemical techniques. We have obtained especially promising results with the JPL spin — etch technique. Under quite practical tolerances for the spin etch, our XPS measurements indicate about lx10-2 monolayer (ML) of total residue. The LEED showed sharp spots in a (1x1) pattern. We review our experimental results and suggest an interpretation in termsof both the chemistry of silicon surfaces in contact with HF in a polar solvent, and thehydrodynamics of liquids on spinning surfaces.