Abstract
A 4-channel silicon photonics transceiver array for Point-to-Point (P2P) fiber-to-the-home (FTTH) optical networks at the central office (CO) side is demonstrated. A III-V O-band photodetector array was integrated onto the silicon photonic transmitter through transfer printing technology, showing a polarization-independent responsivity of 0.39 - 0.49 A/W in the O-band. The integrated PDs (30 × 40 μm2 mesa) have a 3 dB bandwidth of 11.5 GHz at -3 V bias. Together with high-speed C-band silicon ring modulators whose bandwidth is up to 15 GHz, operation of the transceiver array at 10 Gbit/s is demonstrated. The use of transfer printing for the integration of the III-V photodetectors allows for an efficient use of III-V material and enables the scalable integration of III-V devices on silicon photonics wafers, thereby reducing their cost.
Highlights
Ethernet point-to-point (P2P) access networks, with advantages such as a simple architecture, no need of expensive wavelength division multiplexing (WDM) components and the ease to upgrade, are mostly deployed in Europe [1]
A III-V O band photodetector array was integrated onto the silicon photonic transmitter through transfer printing technology, showing a polarization-independent responsivity of 0.39 - 0.49 A/W in the O band
The use of transfer printing for the integration of the III-V photodetectors allows for an efficient use of III-V material and enables the scalable integration of III-V devices on silicon photonics wafers, thereby reducing their cost
Summary
Ethernet point-to-point (P2P) access networks, with advantages such as a simple architecture, no need of expensive wavelength division multiplexing (WDM) components and the ease to upgrade, are mostly deployed in Europe [1]. In order to cost-effectively integrate the III-V photodetectors on the silicon photonic wafers, wafer-scale processes are required. Since the material coupons/devices can be wafer-scale pre-defined in a dense array on the III-V source wafer and picked-up and printed in a massively parallel way, the efficiency of the usage of source material is significantly improved and the cost of the integration is greatly reduced. An array of III-V O band photodetectors (PDs) was integrated with the silicon photonics circuit. This work showcases the great potential that transfer printing has for the integration of III-V opto-electronic components on a silicon photonic integrated circuit wafer
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