Abstract
The prospects and advantages of silicon germanium quantum cascade lasers are discussed, from both physical and technological perspectives. A range of Si/SiGe intersubband laser configurations are discussed, for both edge and surface emission. Recent experimental activity on mid- and far-infrared devices is reviewed, and the value of detailed theoretical tools for heterostructure design is highlighted. Steps towards silicon optoelectronic integration are also considered.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: International Journal of High Speed Electronics and Systems
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
