Abstract
This work describes several novel Si-containing polymers with low optical densities at 193nm and acid labile protecting groups. These materials are evaluated at 193nm lithography as one of the top surface imaging techniques to enhance lithography performance. Additionally, norbornene/maleic anhydride copolymers containing silicon side chains are synthesized. Experimental results indicate that the unexposed and exposed regions differ in terms of silicon content to the extent that patterns are formed using oxygen reactive ion etching. Moreover, a polymer with at least 3.5%wt of Si content can provide effective etch resistance in this study. 0.11μm line/space patterns are also obtained using conventional developer with an ArF excimer laser stepper.
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