Abstract
AbstractA detailed chemical mechanism for the silicon carbide epitaxial growth using chlorinated precursors is presented here. The mechanism involves 155 gas phase and 66 surface reactions among 47 gas phase and 9 surface species, respectively. A comparison with the performances of the standard process using silane is presented and the observed growth rate increase and the disappearing of the homogeneous silicon droplets in gas phase is explained. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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