Abstract
The relatively low value of the number of electron-hole (e-h) pairs per micron for Minimum Ionizing Particles (MIPs) in SiC against the value for Si, imposes severe constrains on the crystallographic quality, the thickness and the doping concentration of the SiC epitaxial layer used as detection medium. In this work, a 85 mu m thick 4H-SiC epitaxial layer with a low doping concentration, N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</sub> les 1 times 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">14</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> , was used in order to have a high number ( ap 4700) of e-h pairs generated by a MIP in the active region. We present experimental data on the charge spectrum for beta MIPs from a <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">90</sup> Sr source, collected in a temperature range from room temperature up to 81degC.
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