Abstract
Silicon carbide gate turn-off thyristor simulations indicate that including within the drift region an n-type layer, doped 5 × 1016 cm-3 and located 3 µm below the top of the drift region, improves the forward blocking state electrostatic field profile. This structure, with a 15 µm total drift region thickness and no other field termination, blocks 2211 V, against 757 V if the n-type buffer layer is left out.
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