Abstract
The characteristics and performance data for blue and violet light-emitting diodes (LEDs) made from silicon carbide (SiC) are presented. Existing technologies for the production of SiC pn structures (ion implantation, CVD epitaxy, and various modifications of liquid-phase epitaxy) are considered, and the corresponding LEDs are compared on the basis of their rated performance. Particular emphasis is placed on liquid-phase epitaxy of SiC from the silicon melt, in view of its leading position in the efficiency levels achieved to date by SiC LEDs. Details are given of two modifications of liquid-phase epitaxy: one employing a container, and another using electromagnetic field suspension. Finally, low-temperature liquid-phase epitaxy from the Sn and Ga melts is briefly described.
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