Abstract
We demonstrate silicon-based traveling-wave photodetector arrays (Si-TWPDAs) with parallel optical feeding by integrating multiple Germanium photodetectors. Such Si-TWPDAs feature the merit of high optical saturation power with remaining the large operation bandwidth. The impedance-matched traveling-wave electrode design takes into account the individual Ge photodetector loading effect. Optical waveguide delay lines are designed in order to balance the electrical phase delay of the traveling-wave electrode. The maximum linear photocurrent at -4V biased voltage are respectively 16 mA, 38 mA, and 65 mA with integrating 1, 2, and 4 photodetectors, upon the saturation power of 40 mW, 100 mW, and 160 mW. This corresponds to a normalized photocurrent generation of >0.32 mA/µm3 and a normalized saturation power of 0.8 mW/µm3. The extracted fiber access responsivity is ~0.42 A/W and the intrinsic responsivity of ~0.82 A/W. The measured 3-dB bandwidth for 4-channel TWPDA is ~20 GHz.
Highlights
Ge-on-Si photodetector [1] is one of the key building blocks for the applications of silicon photonic based optical interconnect [2] and microwave photonics [3]
We demonstrate silicon-based traveling-wave photodetector arrays (Si-TWPDAs) with parallel optical feeding by integrating multiple Germanium photodetectors
Such traveling-wave photodetector array has wide applications such as optical communication, optical interconnection, and analog fiber-optic link
Summary
Ge-on-Si photodetector [1] is one of the key building blocks for the applications of silicon photonic based optical interconnect [2] and microwave photonics [3]. The conventional high-speed photodetector is designed with small absorption volume to ensure low capacitance and small carrier transit time, cannot achieve high saturation power. In view of such tradeoff, various traveling-wave photodetector arrays in III/V material were proposed and demonstrated for high power and large bandwidth operation [6,7,8,9,10]. We demonstrate, for the first time to the best of our knowledge, silicon-based parallel-fed traveling-wave photodetector arrays (TWPDAs) [3, 4] with multiple integrated Ge photodetectors, featuring the merits of large operation bandwidth as well as high optical power handling capability. The extracted fiber access responsivity is ~0.42 A/W, corresponding to an intrinsic responsivity of 0.82 A/W
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