Abstract
MnSb2Se4 is a thermoelectric material that has not been receiving much attention. However, it has the sufficient potential to be exploited with a wide range of applications. It is a narrow band p-type semiconductor with high Seebeck coefficient and low thermal conductivity. The lower carrier concentration prevents it from having better thermoelectric performance. Therefore, we doped the Mn position of MnSb2Se4 with Ag atoms to improve the thermoelectric properties by enhancing the carrier concentration of the material while modulating its thermal conductivity. The final sample Mn0.9Ag0.1Sb2Se4 has a PF of 2.54 μWcm-1K-2 at 773 K. Combined with the reduction of the thermal conductivity κ optimizes the ZT value from 0.17 to 0.65 at 773 K.
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