Abstract

Silicon-germanium heterojunction bipolar transistors (HBTs) have been developed with regard to high cutoff frequencies within a wide collector current range. Unity current gain frequencies f/sub T/ high as 116 GHz were obtained at a collector current density of 2*10/sup 5/ A/cm/sup 2/. In addition, the FWHM of cutoff frequency f/sub T/ against collector current exceeds one and a half decades. Calculations indicate that the ratio of the collector to emitter area essentially determines the current density range of a high frequency HBT. >

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