Abstract
Heteroepitaxial AlGaN/GaN on SiC/Si pseudosubstrate was used to fabricate three-terminal junction devices. Narrow bar and wide bar type active regions were fabricated. The measurement at room temperature showed predicted nonlinear behavior (previously reported about as negative type rectification). Unusual, positive type rectification for two dimensional electron gases was also observed. The electrical characteristics depend on the geometrical configuration of the devices.
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