Abstract
Purification of metallurgical-grade silicon (MG–Si) by a combination of Al-Si solidification refining and electromagnetic oscillating separation and acid leaching collection has been studied. The primary Si crystals and Al-Si alloy in hypereutectic Al-30%Si melt were separated during solidification under the pulse electromagnetic field (PEF). The results show that the Si content in Si-rich layer increases with increasing discharging frequency. The typical metallic impurities (Fe, Ti, and Ca) have removal fraction higher than 99.5%. The removal fractions of the impurities B and P which are more difficult to remove are over 90% and 85%, respectively.
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