Abstract
New results obtained with multidrain MOSFET magnetic-field sensors (commonly named MAGFETs) are presented. The dependence of the sensitivity and noise characteristics on the device geometries and dimensions and on contact positions has been investigated experimentally. From these results, it appears that the resolution is better when the MAGFET is used as a Hall-MOS sensor rather than as a multidrain magnetotransistor. Although the 1/ f noise in MOS devices has a rather high level, a very good value of 150 nT/√Hz has been obtained for the minimum detectable magnetic field.
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