Abstract
A Si film formed by vacuum deposition as an annealing cap for a Si-implanted GaAs substrate has been studied. GaAs substrates implanted with 3×1013 Si ions/cm2 at 100 keV were furnace annealed with Si caps at temperatures between 750 and 900 °C for 15 min. The existence of Ga and/or As atoms in the Si cap film was not detected in the Rutherford backscattering spectra of the Si films after annealing. The differential Hall measurement showed that the carrier concentration profile distributed within the ion implanted region. The Si cap film has feasible characteristics for annealing of Si-implanted GaAs.
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