Si epitaxial growth on self-limitedly B adsorbed Si 1 − xGe x(100) by ultraclean low-pressure CVD system

Abstract

B atomic-layer doping in Si/Si 1 − x Ge x (100) ( x = 0.3, 1) heterostructure utilizing BCl 3 reaction on Si 1 − x Ge x (100) and subsequent Si epitaxial growth by SiH 4 reaction was investigated by ultraclean low-pressure chemical vapor deposition. On 1/3–1/2 atomic layer (2.3–3.5 × 10 14 cm − 2 ) B formed Si 1 − x Ge x (100) achieved self-limitedly with high Cl coverage, the adsorbed Cl atoms are effectively removed by SiH 4 exposure at 300 °C after BCl 3 exposure. Furthermore, it was found that the SiH 4 reaction at 300 °C on Ge(100) is enhanced by B adsorption.