Abstract
A gigahertz-sampling-rate flash A/D (analog/digital)-conversion LSI using high-speed Si bipolar technology (SST-1B) is investigated. To improve comparator speed, a circuit technology to minimize the comparator-speed limiting factors with minimum power is investigated and applied. To enhance the dynamic accuracy, speed mismatch among comparators is also minimized using this circuit technology. To improve encoder speed, a quasi-Gray code is adopted and glitch noise is reduced with this code. The LSI performance at 1-GHz sampling rate is measured with a gigahertz-operation data acquisition system developed with the SST MSI family, and effective bits of 5.8 at an input frequency of 100 MHz and 4.8 at 500 MHz are achieved. This LSI also demonstrates the feasibility of a single-chip flash A/D converter with a gigahertz sampling rate using Si bipolar technology.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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