Abstract
AlxGa1−xN quasi-ternary compounds were grown on (0001) Al2O3 substrates with shutter control method by molecular beam epitaxy using an RF-radical nitrogen source. Theoretical estimation indicated that for Al0.5Ga0.5N/GaN short period superlattice, very thin Al0.5Ga0.5N barrier layer less than 2 mono-layer is required for obtaining Al0.1Ga0.9N quasi-ternary properties. The Al content of the quasi-ternary compounds, which consisted of GaN/AlGaN mono-layer order superlattice, was controlled from 0 to 0.47, with changing the shutter pattern of Ga, Al and nitrogen sources. The growth of GaN/Al0.07Ga0.93N/Al0.3Ga0.70N SCH multi-layer structure with the different Al composition without growth interruption using quasi-ternary AlGaN is also demonstrated.
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