Abstract
Shubnikov-de Haas oscillations were observed for n -channel (100) Si MOS–FETs in pulsed high magnetic fields up to 37 T. Magnetic field dependence of the peak height of the transverse conductivity σ x x associated with the N =0 Landau level was investigated at various magnitudes of source-drain field at 1.9 K. In high magnetic field range, it was found that the height of the first of the four N =0 peaks increased with increasing magnetic field when the source-drain field was relatively low. Similar increase of the peak height by magnetic field was also observed for the other three peaks. The number of immobile electrons in the lowest Landau level was also estimated, and it was found to increase as the magnetic field was increased. In addition, fine structures were observed between the gaps of the conductivity peaks.
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