Abstract
The Shubnikov–de Haas effect in InAlAs measured using pulsed magnetic fields up to 50 T is reported. The InAlAs samples were grown by molecular beam epitaxy (MBE) and were either δ or slab doped with silicon at densities up to 7×1012 cm−2. Comparison of experimental subband densities with those calculated self-consistently shows that spreading of Si occurs by surface segregation at growth temperatures of ∼520 °C, similar to its behavior in MBE-grown InGaAs. In contrast to InGaAs, the InAlAs exhibits persistent photoconductivity which appears to be caused by a bulk defect rather than DX(Si) states.
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