Abstract
The Shubnikov–de Haas effect in InAlAs measured using pulsed magnetic fields up to 50 T is reported. The InAlAs samples were grown by molecular beam epitaxy (MBE) and were either δ or slab doped with silicon at densities up to 7×1012 cm−2. Comparison of experimental subband densities with those calculated self-consistently shows that spreading of Si occurs by surface segregation at growth temperatures of ∼520 °C, similar to its behavior in MBE-grown InGaAs. In contrast to InGaAs, the InAlAs exhibits persistent photoconductivity which appears to be caused by a bulk defect rather than DX(Si) states.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.