Abstract
We report GaInAsSb-based p-i-n photodiodes operating in the 2-2.4-μm wavelength range grown on GaAs (100) substrates using the interfacial misfit (IMF) array technique. A zero-bias dynamic-resistance-area product of 260 Ωcm2 and a room temperature peak responsivity of 0.8 A/W (at 2 μm) with an estimated maximum detectivity (D*) of ~3.8×1010 cm Hz1/2 W-1 is obtained in the photodiodes at -0.2 V. These preliminary results of the IMF-based GaInAsSb detectors are comparable to similar detectors grown on native GaSb substrates demonstrating the potential of the IMF array growth mode to realize high-quality Sb-based infrared detectors on GaAs substrates.
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