Abstract
Short-channel zinc oxynitride (ZnON) thin-film transistors (TFTs) were fabricated based on the film profile engineering in combination with e-beam lithographical patterning. ZnON films were deposited using reactive magnetron sputtering in N 2 /O 2 ambient and exhibit a Hall mobility of 95 cm2/V-s. A ZnON TFT with channel length of 147nm shows high on/off current ratio of 5×107 and field-effect mobility of 9.1 cm2/Vs, which are superior or comparable to their counterparts of IGZO or ZnO TFTs.
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