Abstract
Short-wave infrared (SWIR) detectors combining AlAs/In0.53Ga0.47As/AlAs double barrier structure (DBS) with In0.53Ga0.47As absorption layer are fabricated by molecular beam epitaxy. By adding a p-charge layer, the dark current density of the detector is lowered by 3 orders of magnitude. The responsivity of the detector is tested at room temperature, which reaches 6000 A/W when the power of the incident light is 0.7 nW. The noise equivalent power (NEP) of the detector at 5 kHz is measured to be 3.77×10−14 W/Hz1/2 at room temperature.
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