Abstract
The electronic synapse, which can vividly emulate short-term and long-term plasticity, as well as voltage sensitivity, in the bio-synapse, is the vital device foundation for brain-inspired neuromorphic computing. In this letter, we propose a Ag/GeSe/TiN memristor as an electronic synapse for brain-inspired neuromorphic applications. Due to the electromigration and diffusion of Ag cation, the volatile and non-volatile switching behaviours are coexistent in this device. Various synaptic functions, including short-term plasticity, long-term plasticity, pair-pulse facilitation, and spike timing-dependent plasticity, have been successfully eliminated in Ag/GeSe/TiN devices. Furthermore, all the synaptic functions are induced by the spiking stimuli with amplitudes of several hundred millivolts. All the results demonstrate that the Ag/GeSe/TiN device has great potential for brain-inspired computing systems in the future.
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