Abstract
The far infra red (FIR) photoconductivity of high purity (μ ≳ 10 5 cm 2 V -1 s -1) chloride-grown n-InP samples has been measured using Fourier transform (FT) spectroscopy. The inherent advantages of the method over laser techniques are discussed. Zeeman spectroscopy of etched samples confirms a build-up of silicon donors at the substrate interface. Spectral features arising from H 2 + analogues are more clearly exposed than in previous measurements and theoretical assignments are made. An anomalous zero-magnetic field splitting is observed in certain samples which are grown comparatively quickly and a possible origin is discussed in terms of a Stark splitting of the (2s, 2p) manifold.
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