Abstract
Shallow and deep levels in SiC significantly affect dynamic characteristics of SiC devices; larger ionization energy and/or a smaller capture cross-section of levels in the SiC bandgap lead to a larger emission time constant and slower response of carriers. Nevertheless, knowledge about those levels is very limited. In this study, we clarified the ionization energy and the capture cross section of the Al shallow acceptor in 4H-SiC in a wide range of doping concentration by preparing appropriate samples and measuring them by thermal admittance spectroscopy. Furthermore, high densities of deep levels were discovered in Al+-implanted samples, which can degrade 4H-SiC device performance without any care.
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