Abstract
Three kinds of parameters are considered to speed up the read operation of phase change memory: bit line parasitic parameters, read transmission gate parasitic parameters and current mirror parasitic parameters. A set reference cell and a reset reference cell are used in the reference circuit. Simulated in 130 nm process, the read access time of 1-Mb phase change memory (PCM) is 6.7 ns. In Monte Carlo simulations, the worst read access time is 13.8 ns compared to conventional 85 ns.
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