Abstract
In the charge pumping (CP) measurement of polycrystalline Si (poly-Si) thin-film transistors (TFTs), an experimental approach is developed to evaluate and separate the geometric current (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">geo</sub> ) from the measured CP current based on a group of TFTs with different channel widths and fixed channel length. Along with the separation of I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">geo</sub> , a new method is proposed to reliably characterize the trap state density of TFTs. Without the I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">geo</sub> , the overestimation in CP measurement is avoided even for short CP pulse transition times. Moreover, critical transition time for the occurrence of geometry effect is determined, which agrees well with the prediction from a physical model of diffusion controlled carrier evacuation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
