Abstract
Sensor for Accumulated Charge Detection in Packaged Insulation Layer of Insulated Gate Bipolar Transistor Power Devices
Highlights
Power electronic transistors have been developed for use in a wide range of devices[1] such as the thyristors used in high-voltage transmission grid systems, gate-commutated turn-off/gate turn-off (GCT/GTO) thyristors, high-voltage insulated gate bipolar transistor (IGBT) modules,(2) high-voltage intelligent power modules (HV-IPM), high-speed railway operation control systems, electric vehicles, and industrial robots
We presented the results of analysis of the electric charge accumulation characteristics in the insulation layer of IGBT-M1 in the above section
In the case of GBT-M1, the ratio started to increase gradually but did not reach 1.5 until the temperature increased to 140 °C. These results indicate that the electric charge accumulation characteristics of IGBT-M1 are better than those of IGBT-M2
Summary
Power electronic transistors have been developed for use in a wide range of devices[1] such as the thyristors used in high-voltage transmission grid systems, gate-commutated turn-off/gate turn-off (GCT/GTO) thyristors, high-voltage insulated gate bipolar transistor (IGBT) modules,(2) high-voltage intelligent power modules (HV-IPM), high-speed railway operation control systems, electric vehicles, and industrial robots. The evaluation method was replaced; instead of depending on leakage current measured using a picoammeter, the characteristics of charge accumulation were evaluated by the pulsed electroacoustic (PEA) method.[7,8] it was difficult to use the PEA method for devices with complicated shapes, such as electric power cables and power devices such as IGBT modules. We describe the fabrication and practical application of the compact system for the evaluation of charge accumulation whose measurement principle is based on the Q(t) method
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