Abstract
Mesoporous WO 3 thin films micro-gas sensor was fabricated and the NO 2 gas-sensing as well as electrical properties have been investigated. The film had nano-sized grains, porous structure with a relative surface area of 143 m 2/g as calcined at 250 °C. Upon exposure to NO 2, the electrical resistance of a semiconducting mesoporous WO 3 thin films is found to dramatically increase. The sensitivity of mesoporous WO 3 thin film sensors is substantially higher than that from other reports. In addition, the mesoporous WO 3 thin film sensor calcined at 250 °C and operated at 35 °C shows an excellent sensitivity of 23, as we know it is unique NO 2 gas sensor which has the sensitivity at such a low temperature.
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