Abstract
The effect of a single discrete impurity in the channel of Fully-Depleted Single- and Double-Gate MOSFETs is analyzed by means of 3D Monte Carlo simulation. The Double-Gate (DG) architecture appears to be less sensitive to the dopant perturbation than the Single-Gate (SG) counterpart. For an N-channel device the influence of a P-type impurity on the current-voltage characteristics is shown to be strongly dependent on the impurity position in the channel. The maximum current degradation is obtained for an impurity located about 5 nm from the source-end of the channel. The I on reduction reaches 6% in DG and 10.5% in SG. A small current enhancement (less than 2%) is induced by an N-type impurity. These results are analyzed in terms of velocity profile between source and drain.
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