Abstract
Improved formulas are proposed describing the correlation signals of bulk traps in semiconductor devices (Schottky barrier diodes and p-n junctions) for constant voltage and constant capacitance deep-level transient spectroscopy analog measurement systems with exponentially weighted average. The presented formulas describe the correlation signals for the two kinds of these systems most often used in practice, i.e., systems utilizing a two-channel boxcar integrator or utilizing a simple one-channel correlator with a bipolar rectangular weighting function. These formulas take into account arbitrary gate width of the applied correlator and the so-called Lambda effect. New analytical formulas describing the rate window for an arbitrarily chosen gate width are proposed. A comparative analysis has been made of the potential sensitivity of these systems as a function of gate width based on two figures of merit: the normalized correlation signal and the normalized output signal-to-noise ratio. The analysis presented enables one to maximize sensitivity of these systems for the study of low-concentration, processing-induced defects in semiconductor devices.
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