Abstract
The state of the development of chromium-doped GaAs bulk material for use as semi-insulating substrates for field-effect transistors and monolithic integrated circuits is reviewed. The shallow level impurities and the deep levels are covered, including some of their effects on ion implantation devices. Silicon and oxygen are the main ambient shallow and deep donor, but a fast-diffusing deep acceptor is also important. Chromium has a solubility limit that depends on the growth temperature for liquid phase epitaxy, and its rejection at the surface during extended bakes at lower temperatures is suggested to be due to this result. The reduction of parasitic substrate current by controlled doping is also presented.
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