Abstract
An effective and physically meaningful analytical predictive model is developed for the evaluation the lattice-misfit stresses (LMS) in a semiconductor film grown on a circular substrate (wafer). The two-dimensional (plane-stress) theory-of-elasticity approximation (TEA) is employed in the analysis. The addressed stresses include the interfacial shearing stress, responsible for the occurrence and growth of dislocations, as well as for possible delaminations and the cohesive strength of a buffering material, if any. Normal radial and circumferential (tangential) stresses acting in the film cross-sections and responsible for its short- and long-term strength (fracture toughness) are also addressed. The analysis is geared to the GaN technology.
Highlights
GaN is a binary III/V direct bandgap semiconductor commonly used in bright light-emitting diodes
Sagar et al [4] have demonstrated that a reduction in dislocation density from about 1010 – 1012 cm-2 in a template prepared using molecular beam epitaxy (MBE) could be reduced to about 2.5×109 cm-2, if a porous SiC substrate is employed
It was determined that even if a reasonably good lattice match takes place and, in addition, the temperature change was significant, the thermal stresses were still considerably lower than the lattice-misfit stresses
Summary
Let us know how access to this document benefits you. Follow this and additional works at: https://pdxscholar.library.pdx.edu/mengin_fac Part of the Mechanical Engineering Commons, and the Semiconductor and Optical Materials. E., Nicolics, J., Khatibi, G., & Lederer, M. Semiconductor film grown on a circular substrate: predictive modeling of lattice-misfit stresses. In IOP Conference Series: Materials Science and Engineering International Conference on Materials, Processing and Product Engineering 2015 (MPPE 2015) IOP Publishing IOP Conf. Series: Materials Science and Engineering 119 (2016) 012029 doi:10.1088/1757-899X/119/1/012029
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