Abstract
Exploring the semiconductor materials with suitable gap and chemical stability is the key to developing solar-blind ultraviolet photodetectors with high stability, responsivity, and detectivity. However, available materials are limited currently, hindering the development of solar-blind detectors greatly. Rare earth oxides (Yb2O3) have the bandgap and high-dielectric constants suitable for solar-blind detection, but its potential of being applied to broadband gap semiconductors has not been deeply studied. Therefore, to activate the semiconductor characteristics of Yb2O3, this work builds a p-Gr/i-Yb2O3/n-Si heterojunction solar-blind ultraviolet photodetector by introducing single-layer graphene. Through tests, this device has an absorption cutoff wavelength of 271 nm, which can almost cover the entire solar-blind ultraviolet band, and a high responsivity of 9.78 mA/W under 0 V bias with the rise and fall time as short as 87 and 73 ms, respectively. This work not only prepares a high-performance solar-blind UV photodetector but also presents the potential application of Yb2O3 in the solar-blind ultraviolet light detection. The high-dielectric performance of rare earth oxides makes it expected to be used for the photoelectric chip unit in future integrated circuit.
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